| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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28,000 pcs
|
28000 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
3,759 pcs
|
3759 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The Toshiba TK4P55DA is a general-purpose power MOSFET with an N-channel configuration and a built-in diode. It is designed for switching applications and operates in enhancement mode.
Key electrical specifications include a minimum breakdown voltage of 550V and a maximum continuous drain current of 3.5A. The maximum drain-source on-resistance is 2.45 ohm, with a pulsed drain current capability of 14A. It also has an avalanche energy rating of 121 mJ.
This MOSFET utilizes Metal-Oxide-Semiconductor (MOS) FET technology and is constructed from silicon. The package is a small outline type, specifically the 2-7K1A, designed for surface mounting with gull wing terminals.
Compliance data indicates RoHS3 compliance, MSL 1 Unlimited, and REACH unaffected status, though these are noted as having low confidence without verification.
The minimum breakdown voltage is 550V.
The maximum continuous drain current is 3.5A.
The maximum drain-source on-resistance is 2.45 ohm.
It is in a small outline package, specifically the 2-7K1A, designed for surface mounting.
The status is RoHS3 Compliant.