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TK60P03M1 The Toshiba TK60P03M1 is an N-Channel Power MOSFET designed for switching applications. It features a 30V breakdown voltage and a 60A maximum drain current.
Mfr Part #:

TK60P03M1

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK60P03M1 is an N-Channel Power MOSFET designed for switching applications. It features a 30V breakdown voltage and a 60A maximum drain current.
✓ Total Stock: 32,500 pcs

TK60P03M1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
32,500 pcs
On Request
32500 pcs On Request 1 On Request On Request 2018+ On Request On Request
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TK60P03M1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Channel Type
Configuration
Mounting Type
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SVHC Present
Transistor Type
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TK60P03M1 Description

Short technical summary and product information.

The Toshiba TK60P03M1 is a general-purpose power MOSFET with an N-channel configuration and built-in diode. It is designed for switching applications and operates in enhancement mode.

 

Key electrical specifications include a minimum breakdown voltage of 30V and a maximum continuous drain current of 60A. The drain-source on-resistance is a low 0.0078 ohm, and the pulsed drain current can reach up to 120A. The avalanche energy rating is 54 mJ.

 

This MOSFET utilizes Metal-Oxide Semiconductor (MOS) FET technology. It is housed in a DPAK-3 small outline package, suitable for surface mounting. The package body is made of plastic/epoxy and has a rectangular shape with gull wing terminals.

 

With its robust specifications, the TK60P03M1 is suitable for various power switching designs.

TK60P03M1 Quick Information

Product Type: Power MOSFET
Canonical Name: Toshiba TK60P03M1 N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

TK60P03M1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK60P03M1 Features

  • N-Channel Power MOSFET for switching.
  • 30V minimum breakdown voltage.
  • 60A maximum continuous drain current.
  • Low 0.0078 ohm drain-source on-resistance.
  • Surface mount DPAK-3 package.

TK60P03M1 Applications

  • Ideal for power switching circuits.
  • Suitable for general purpose applications.
  • Used in industrial automation systems.
  • Component in power supply designs.

TK60P03M1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

30 V.

What is the package type?

DPAK-3 (TO-252) surface mount package.

What is the continuous drain current?

60 A.

What is the on-resistance?

0.0078 ohm maximum.

What is the channel type?

N-channel.

What is the transistor configuration?

Single with built-in diode.

What is the mounting type?

Surface mount.

TK60P03M1 Alternate Parts

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The Infineon Technologies BSC082N10LSG is an N-Channel Power MOSFET designed for switching applications. It offers a 100V breakdown voltage and a low on-resistance.
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