| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,588 pcs
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6588 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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The Infineon Technologies BSC082N10LSG is a general-purpose N-Channel Power MOSFET. It features a breakdown voltage of 100V and a maximum continuous drain current of 13.8A. The device exhibits a low drain-source on-resistance of 0.0082 ohm at its maximum rating.
This MOSFET utilizes Metal-Oxide Semiconductor (MOS) FET technology and operates in enhancement mode. It is configured as a single element with a built-in diode, making it suitable for various switching applications. The pulsed drain current can reach up to 400A, and it has an avalanche energy rating of 377 mJ.
The BSC082N10LSG is supplied in a GREEN, PLASTIC, TDSON-8 package, designed for surface mounting. The package material is plastic/epoxy, with a rectangular shape and small outline style. It has matte tin terminal finish and flat terminal form, with dual terminal position.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current (ID) for the BSC082N10LSG is 13.8 A.
The minimum breakdown voltage (Vds) for the BSC082N10LSG is 100 V.
The maximum drain-source on-resistance (Rds(on)) for the BSC082N10LSG is 0.0082 ohm.
The BSC082N10LSG has an N-CHANNEL type.
The BSC082N10LSG is supplied in a TDSON-8 package for surface mounting.
The BSC082N10LSG is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BSC082N10LSG is 1 Unlimited.