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35,666 pcs
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35666 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The TPCA8088-H is a silicon-based N-channel enhancement-mode metal-oxide semiconductor field-effect transistor manufactured by Toshiba. Engineered for general-purpose power switching, this component delivers a minimum breakdown voltage of 30V and supports up to 48A of continuous drain current. Its exceptionally low drain-source on-resistance of 0.0027 Ohms ensures minimal conduction losses and improved thermal efficiency in high-current circuits.
Designed with a built-in diode and housed in a surface-mount SOP-8 package, the TPCA8088-H facilitates automated PCB assembly and compact board layouts. The square plastic/epoxy body features five flat dual terminals with the case connected to the drain for effective heat dissipation. With a pulsed drain current rating of 144A and an avalanche energy rating of 299 mJ, it provides robust performance for demanding power management tasks.
This single-element MOSFET is optimized for rapid switching operations, making it suitable for DC-DC converters, motor drivers, and load switch applications. Engineers can rely on its stable electrical characteristics and reliable construction for consistent system performance across various industrial and consumer electronics designs.
The TPCA8088-H supports a maximum continuous drain current of 48 Amperes.
It is housed in a surface-mount SOP-8 package with a square plastic/epoxy body and five flat dual terminals.
Yes, the device features a single configuration with a built-in diode.
The component has a minimum breakdown voltage of 30 Volts.
Yes, it is an enhancement-mode N-channel MOSFET specifically designed for switching applications.