| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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33,256 pcs
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33256 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The Toshiba TPCA8087-H is a general-purpose N-Channel Power MOSFET suitable for switching applications. It offers a maximum drain current of 56A and a breakdown voltage of 30V.
Key electrical characteristics include a maximum drain-source on-resistance of 0.0023 ohm and a pulsed drain current of 168A. The FET technology is Metal-Oxide Semiconductor, utilizing a silicon element. The MOSFET operates in enhancement mode and includes a built-in diode.
This component is housed in a small outline SOP-8 package with a square shape and plastic/epoxy body material. It is designed for surface mounting and features flat terminal forms with dual terminal positions. The avalanche energy rating is 407 mJ.
Toshiba America Electronic Components, Inc. provides this MOSFET, which is active and suitable for various power switching needs.
30 V
56 A
0.0023 ohm
N-channel
2-5Q1S, SOP-8 surface mount
RoHS3 Compliant