| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channel Type | |
| Configuration | |
| Mounting Type | |
| Operating Mode | |
| Transistor Type |
The Toshiba 2SK4033 is a general-purpose power MOSFET with an N-CHANNEL configuration and a built-in diode. It operates in enhancement mode and is suitable for switching applications.
Key electrical specifications include a minimum breakdown voltage of 60V and a maximum continuous drain current (ID) of 5A. The drain-source on-resistance is a maximum of 0.15 ohm, and the pulsed drain current (IDM) can reach up to 20A. The avalanche energy rating (Eas) is 40.5 mJ.
This MOSFET utilizes METAL-OXIDE SEMICONDUCTOR (MOS) FET technology and is constructed from silicon. It is designed for surface mounting and comes in a small outline package with gull wing terminals.
The component is specified with a RoHS3 compliant status and an MSL of 1 Unlimited. Its REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage is 60V.
The maximum continuous drain current (ID) is 5A.
The maximum drain-source on-resistance is 0.15 ohm.
The 2SK4033 has an N-CHANNEL type.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.