| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,572 pcs
|
2572 pcs | On Request | 1 | On Request | On Request | 1607+ | On Request | On Request |
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| Manufacturer Name | |
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| SVHC Present |
The Toshiba TK4A60DA is an N-Channel MOSFET designed for power switching applications. It features a high Drain-Source Voltage rating of 600V and a typical Drain-Source On-Resistance of 2.2Ω.
With a continuous drain current capability of 3.5A and a maximum power dissipation of 35W, this MOSFET is suitable for various power management tasks. The device operates at a maximum temperature of 150°C and has a gate threshold voltage of 2.4V.
The TK4A60DA is supplied in a standard TO-220 package, which is suitable for through-hole mounting. This package type facilitates easy integration into circuit designs and provides adequate thermal performance for many applications.
This component is part of Toshiba's range of semiconductor devices, offering reliable performance for electronic designs requiring efficient power control.
600V.
TO-220.
150°C.
2.2Ω.
3.5A.
2.4V.
35W.