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MJE182

The MJE182 is an NPN power transistor from Goodwork Semiconductor. It features a maximum Collector-Emitter Voltage of 80V and a continuous Collector Current of 3A.

✓ Total Stock: 249 pcs

$ Price Range: $0.99

MJE182 Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Braun Electronic Components ✓ Non-Authorised Inventory information	249 pcs On Request	249 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

MJE182 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Goodwork Semiconductor
Mounting Type	Through Hole
Number of Pins	3 Pins
Operating Temperature	150°C
Power Dissipation	12.5 W
SVHC Present	Not Present
Termination Style	Through Hole

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MJE182 Description

Short technical summary and product information.

The MJE182 is an NPN bipolar junction transistor (BJT) designed for low power audio amplifier and high-speed switching applications. Manufactured by Goodwork Semiconductor, this transistor offers a robust set of electrical and thermal characteristics suitable for various electronic designs.

Key electrical specifications include a maximum Collector-Emitter Voltage (VCEO) of 80V and a maximum Collector-Base Voltage (VCB) of 100V. It can handle a continuous Collector Current (IC) of up to 3A and a peak current of 6A. The DC Current Gain (hFE) is a minimum of 30 at 0.5A and 12 at 1.5A, with a minimum Current-Gain - Bandwidth Product (fT) of 50 MHz at 100 mAdc.

Thermal performance is supported by a maximum Power Dissipation (PD) of 12.5W at 25°C ambient temperature, with a derating above this point. The operating and storage junction temperature range is from -65°C to +150°C.

The MJE182 is housed in a SOT-32 package, designed for through-hole mounting. This package style and termination are common in power applications where heat dissipation and reliable connections are crucial.

MJE182 Quick Information

Product Type: NPN Power Transistor

Canonical Name: MJE182 NPN Power Transistor

Subcategory: NPN

MJE182 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

MJE182 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE182 Features

NPN bipolar junction transistor.
80V Collector-Emitter Voltage.
3A Continuous Collector Current.
12.5W Power Dissipation.
SOT-32 package for through-hole mounting.

MJE182 Applications

Low power audio amplifier circuits.
High-speed switching applications.
General purpose amplification tasks.

MJE182 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum Collector-Emitter Voltage for the MJE182?

The maximum Collector-Emitter Voltage (VCEO) for the MJE182 is 80V.

What is the continuous Collector Current rating of the MJE182?

The MJE182 has a continuous Collector Current rating of 3A.

What is the maximum Power Dissipation of the MJE182 at 25°C ambient?

The maximum Power Dissipation (PD) for the MJE182 at 25°C ambient temperature is 12.5W.

What is the operating temperature range for the MJE182?

The MJE182 operates within a temperature range of -65°C to +150°C.

What is the package type for the MJE182 transistor?

The MJE182 is supplied in a SOT-32 package.

What is the DC Current Gain (hFE) of the MJE182 at IC = 1.5 Adc?

The minimum DC Current Gain (hFE) for the MJE182 at an IC of 1.5 Adc is 12.