| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,030 pcs
|
6030 pcs | On Request | 1 | On Request | On Request | 1102+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Package / Case | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present |
The TK6A45DA from Toshiba is an N-Channel MOSFET belonging to the π-MOSVII series. It features a high drain-to-source voltage rating of 450V and can handle a continuous drain current of 5.5A at 25°C.
Key electrical characteristics include a maximum Rds(on) of 1.35 Ohm at 2.8A and 10V, a maximum gate charge of 11 nC at 10V, and a maximum input capacitance of 490 pF at 25V. The gate threshold voltage is a maximum of 4.4V at 1mA, and the maximum gate-source voltage is ±30V.
This MOSFET is housed in a TO-220SIS package, suitable for through-hole mounting. It operates within a temperature range of up to 150°C.
The TK6A45DA is RoHS3 compliant, indicating adherence to environmental regulations regarding hazardous substances.
The drain-to-source voltage (Vdss) is 450V.
The continuous drain current (Id) at 25°C is 5.5A.
The maximum Rds(on) is 1.35 Ohm at 2.8A and 10V.
The operating temperature is up to 150°C (TJ).
The TK6A45DA is supplied in a TO-220SIS package.
It is designed for through-hole mounting.
The RoHS status is RoHS3 Compliant.