| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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The YG865C10R from Fujitsu Semiconductor is a Schottky Barrier Diode designed for high-frequency applications. It offers a repetitive peak reverse voltage of 100V and an average output current of 20A.
Key electrical characteristics include a maximum forward voltage of 0.86V at 10A and a maximum reverse current of 175µA at 100V. The diode has a low IR and low VF, making it suitable for efficient power conversion.
Packaged in a TO-220F, this component is designed for through-hole mounting. Its operating junction temperature ranges from -40°C to +150°C, with a storage temperature range also up to 150°C.
Applications for the YG865C10R include DC-DC converters and AC adapters, where its high-frequency operation and robust specifications are beneficial.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.32 | $1.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage (VRRM) for the YG865C10R is 100V.
The YG865C10R has an average output current rating of 20A.
The maximum forward voltage for the YG865C10R is 0.86V when the forward current is 10A.
The operating junction temperature for the YG865C10R ranges from -40°C to +150°C.
The YG865C10R is supplied in a TO-220F package.