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TK14A55D The Toshiba TK14A55D is an N-Channel MOSFET with a 550V drain-to-source voltage and 14A continuous drain current. It is housed in a TO-220SIS package.
Mfr Part #:

TK14A55D

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK14A55D is an N-Channel MOSFET with a 550V drain-to-source voltage and 14A continuous drain current. It is housed in a TO-220SIS package.
✓ Total Stock: 31,000 pcs

TK14A55D Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
31,000 pcs
On Request
31000 pcs On Request 1 On Request On Request 14+NOPB On Request On Request
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TK14A55D Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Package / Case
Power Dissipation
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Vgs(th) (Max) @ Id
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TK14A55D Description

Short technical summary and product information.

The Toshiba TK14A55D is a high-performance N-Channel MOSFET designed for power management applications. It features a maximum drain-to-source voltage (Vdss) of 550V and a continuous drain current (Id) of 14A at 25°C. The on-resistance (Rds On) is specified at a maximum of 370mOhm at 7A and 10V gate drive voltage.

 

This MOSFET utilizes Metal Oxide Semiconductor (MOS) technology and belongs to the π-MOSVII series. Key electrical parameters include a gate charge (Qg) of 40nC maximum and a gate-source voltage (Vgs) limit of ±30V. The input capacitance (Ciss) is 2300pF maximum at 25V.

 

With a maximum power dissipation of 50W (Tc) and an operating junction temperature of 150°C, the TK14A55D is suitable for demanding thermal environments. It is mounted via a through-hole configuration in a TO-220SIS package, making it a versatile component for various electronic designs.

 

The device is ROHS3 compliant, indicating adherence to environmental standards. Its robust specifications make it a reliable choice for power switching and amplification circuits.

TK14A55D Quick Information

Product Type: MOSFET
Series: π-MOSVII
Canonical Name: TK14A55D N-Channel MOSFET
Subcategory: Single N-Channel

TK14A55D Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK14A55D Features

  • 550V drain-to-source voltage rating.
  • 14A continuous drain current capability.
  • Low 370mOhm maximum on-resistance.
  • Through-hole TO-220SIS package.
  • ROHS3 compliant environmental status.

TK14A55D Applications

  • Suitable for power switching circuits.
  • Used in power management designs.
  • Applicable for voltage regulation.
  • Ideal for general purpose FET applications.

TK14A55D FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the TK14A55D?

550V.

What is the continuous drain current rating?

14A at 25°C ambient temperature.

What is the on-resistance of the device?

370mOhm maximum at 7A drain current and 10V gate-source voltage.

What is the gate charge of the TK14A55D?

40nC maximum at 10V gate-source voltage.

What is the input capacitance?

2300pF maximum at 25V drain-source voltage.

What is the package type of the TK14A55D?

TO-220SIS through-hole package.

What is the maximum operating junction temperature?

150°C.

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