TK80S06K3L
VBsemi
The VBsemi TK80S06K3L is a Single N-Channel MOSFET in a TO252 package. It features a 60V drain-source voltage and a continuous drain current of 97A.
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20,064 pcs
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20064 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The SUD50P04-40P-E3 from VBsemi is a P-Channel MOSFET engineered for diverse power electronic applications. This high-performance device offers a robust -40V drain-source voltage (VDS) capability and can handle a significant drain current (ID) of up to -65A. Its low on-state resistance (RDS(ON)) of 12mΩ at a gate-source voltage (VGS) of 10V ensures efficient power transfer with minimal loss.
With a gate-source threshold voltage (Vth) of -1.6V, the SUD50P04-40P-E3 is suitable for various control and switching functions. The device is housed in a TO252 package, commonly used for surface-mount applications requiring good thermal performance.
This MOSFET finds broad application in areas such as power management modules, motor drivers, battery management systems, power switches, and automotive electronics. Its specifications make it a reliable choice for systems requiring efficient power conversion, stable current regulation, and fast switching capabilities.
The maximum drain-source voltage is -40V.
The maximum drain current is -65A.
The typical on-resistance is 12mΩ at VGS=10V, with a maximum of 15mΩ.
The nominal gate threshold voltage is -1.6V.
The maximum gate-source voltage is ±20V.
The device is offered in a TO252 surface-mount package.