TK80S06K3L
VBsemi
The VBsemi TK80S06K3L is a Single N-Channel MOSFET in a TO252 package. It features a 60V drain-source voltage and a continuous drain current of 97A.
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20,030 pcs
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20030 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The VBsemi STU307S is a high-performance P-channel MOSFET engineered for demanding high current applications. It features a drain-source voltage (VDS) of -30V and a maximum continuous drain current (ID) of -60A. The MOSFET utilizes Trench technology, offering low on-resistance (RDS(ON)) values of 13mΩ at VGS=4.5V and 11mΩ at VGS=10V. This combination of low resistance and high current capability makes it suitable for power management, industrial drives, and battery management systems.
The STU307S is housed in a TO252 package, designed for surface mount applications. Its robust electrical characteristics and efficient design contribute to improved system energy efficiency and reduced heat generation, making it a reliable choice for modern high-efficiency electronic systems. Applications include DC-DC converters, electric drive systems, and power factor correction circuits.
The drain-source voltage (VDS) of the STU307S MOSFET is -30V.
The maximum continuous drain current (ID) for the STU307S is -60A.
The on-resistance (RDS(ON)) of the STU307S at VGS=10V is 11mΩ.
The STU307S MOSFET is supplied in a TO252 package.
The STU307S MOSFET uses Trench technology.