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6,248 pcs
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6248 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The SUD50N03-09P-GE3 from VBsemi is a Single N-Channel MOSFET designed for broad application use. This device utilizes Trench Technology, offering robust performance characteristics.
Key electrical specifications include a drain-source voltage (Vds) of 30V and a continuous drain current (Ida) of 80A. The typical on-resistance (Rds(on)) is rated at 5mΩ at a gate-source voltage (Vgs) of 10V, and 6mΩ at 4.5V Vgs. The typical gate threshold voltage (Vth) is 1.7V.
This MOSFET is housed in a TO252 package, suitable for surface mount applications. Its configuration as a Single N-Channel FET makes it a versatile component for power management and electronic control systems. The product is described as RoHS3 Compliant, with an MSL rating of 1.
VBsemi provides technical support for this component and offers a PDF datasheet for download. The manufacturer's website also lists application areas such as energy management, industrial automation, consumer electronics, and transportation.
The drain-source voltage (Vds) is rated at 30V.
The continuous drain current (Id) is 80A.
The typical on-resistance at Vgs=10V is 5mΩ.
It is available in a TO252 (DPAK) surface-mount package.
The typical gate threshold voltage (Vth) is 1.7V.
It uses Trench technology.