| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20,193 pcs
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20193 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| Technology |
The STU302S-VB is a high-performance single N-channel MOSFET manufactured by VBsemi, utilizing Trench technology. It is housed in a TO252 package and is designed for efficient power applications. This MOSFET boasts a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 80A, making it suitable for low-voltage, high-current applications such as power management, power switching, and motor control.
With a very low on-resistance (RDS(ON)) of 6mΩ at VGS=4.5V and 5mΩ at VGS=10V, the STU302S significantly reduces energy loss and enhances overall efficiency. Its threshold voltage (Vth) is 1.7V, allowing it to conduct at lower gate voltages, which is beneficial for applications requiring fast response times and high switching efficiency. The combination of low on-resistance and high current capability makes it an excellent choice for battery-powered systems, power modules, motor drive systems, and high-frequency switching power supplies, contributing to improved system energy efficiency and stability.
Key applications include power management systems like DC-DC converters, battery drive systems for electric tools and vehicles, electric motor control, and high-efficiency switch-mode power supplies (SMPS). Its fast switching performance also makes it suitable for high-frequency switching circuits.
The STU302S is supplied in a TO252 package, designed for surface mounting.
The maximum drain-source voltage (Vds) is 30V.
The maximum drain current (Id) is 80A.
The typical on-resistance is 5mΩ at VGS=10V and 6mΩ at VGS=4.5V.
The STU302S is available in a TO252 surface mount package.
The typical threshold voltage (Vth) is 1.7V.
The STU302S uses Trench technology.