2N7002K-13
Diodes Incorporated
The Diodes Incorporated 2N7002K-13 is an N-channel MOSFET designed for general-purpose switching applications. It features a 60V breakdown voltage and 300mA maximum drain current.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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516,571 pcs
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516571 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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6,166 pcs
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6166 pcs | On Request | 1 | On Request | On Request | 10+05 | On Request | On Request | |
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2,347 pcs
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2347 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The Toshiba SSM3K01T is a general-purpose small signal N-channel MOSFET. It is configured as a single transistor with a built-in diode and operates in enhancement mode.
Key electrical specifications include a minimum breakdown voltage of 30V and a maximum drain current (ID) of 3.2A. The maximum drain-source on-resistance is 0.1200 ohm. The FET technology used is Metal-Oxide Semiconductor, and the transistor element material is Silicon.
This MOSFET is designed for switching applications and comes in a TSM, 2-3S1A package. It is a surface-mount component with gull wing terminals and a rectangular plastic/epoxy body, classified as a small outline package. The dual terminal position is typical for this package style.
Environmental compliance includes RoHS3 compliance, an MSL of 1 Unlimited, and REACH unaffected status. These compliance details are inherited from the existing database with low confidence and should be verified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage for the SSM3K01T is 30V.
The maximum drain current (ID) for the SSM3K01T is 3.2A.
The maximum drain-source on-resistance for the SSM3K01T is 0.12 Ohm.
The SSM3K01T is a general-purpose small signal N-channel MOSFET.
The SSM3K01T is supplied in a TSM, 2-3S1A package.
Yes, the SSM3K01T is a surface mount device.