| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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401,778 pcs
|
401778 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,279 pcs
|
2279 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
1,709 pcs
|
1709 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SI4410DY-T1-E3 is an N-Channel MOSFET featuring Metal-Oxide Semiconductor technology. It offers a minimum breakdown voltage of 30V and a maximum drain current (ID) of 10A. The device has a low drain-source on-resistance of 0.0200 ohm.
This MOSFET is configured as a single element with a built-in diode and operates in enhancement mode. It has 8 terminals and is housed in a small outline, rectangular plastic/epoxy package suitable for surface mounting. The terminal finish is matte tin with a gull-wing form.
This component is RoHS3 compliant and lead-free. Its MSL is rated as 1 Unlimited and REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.22 | $2.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage is 30 V.
The maximum drain current (ID) is 10 A.
The maximum drain-source on-resistance is 0.0200 ohm.
It uses Metal-Oxide Semiconductor FET technology.
The package style is Small Outline.
Yes, it is RoHS3 Compliant.