| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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602,667 pcs
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602667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba TPC6012 is a general-purpose small signal N-Channel MOSFET. It features a breakdown voltage of 20V and a maximum continuous drain current of 6A. The MOSFET utilizes Metal-Oxide Semiconductor technology and is configured as a single transistor with a built-in diode.
This component is housed in a small outline rectangular package with gull wing terminals, suitable for surface mounting. Its operating mode is enhancement, and it is designed for switching applications.
The TPC6012 has a drain-source on-resistance of 0.038 ohm maximum. It is constructed from silicon and has 6 terminals. The package body material is plastic/epoxy.
This MOSFET is suitable for various electronic designs requiring efficient switching capabilities within its specified voltage and current ratings.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage is 20V.
The maximum drain current (ID) is 6A.
The maximum drain-source on-resistance is 0.038 ohm.
It is a general-purpose small signal N-Channel MOSFET.
It is supplied in a small outline rectangular package (2-3T1A) with gull wing terminals for surface mounting.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.