| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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70,000 pcs
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70000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The TPC6012 is a general-purpose small signal N-Channel MOSFET manufactured by VBsemi. It operates in enhancement mode and includes a built-in diode. This MOSFET has a minimum breakdown voltage of 20V and a maximum drain current (ID) of 6A.
The device has a maximum Drain-Source On Resistance of 0.0380 ohm. It utilizes Metal-Oxide Semiconductor FET technology and is suitable for switching applications.
The TPC6012 is packaged in a 2-3T1A small outline package with gull wing terminals, designed for surface mounting. The package body material is plastic/epoxy. It has 6 terminals and is a single-element transistor.
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level (MSL) 1, and REACH unaffected status. However, this compliance data is from the existing database and is considered low confidence.
The minimum breakdown voltage for the TPC6012 MOSFET is 20V.
The TPC6012 MOSFET has a maximum drain current of 6A.
The maximum Drain-Source On Resistance for the TPC6012 is 0.038 ohm.
The TPC6012 is an N-Channel MOSFET.
The TPC6012 is supplied in a 2-3T1A small outline package.
The TPC6012 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the TPC6012 is 1 Unlimited.