| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,051,020 pcs
|
2051020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Channel Type | |
| Configuration | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
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The 2N7002K-13 from Diodes Incorporated is a small signal, N-channel MOSFET. It operates in enhancement mode and is suitable for general-purpose switching applications.
Key electrical specifications include a minimum breakdown voltage of 60V and a maximum drain current of 300mA. The maximum on-resistance is rated at 2 ohms, with a maximum feedback capacitance of 5 pF. The FET technology utilized is Metal-Oxide Semiconductor.
This component is configured as a single MOSFET with a built-in diode. It is designed for surface mounting and comes in a small outline package with gull wing terminals.
The 2N7002K-13 is classified under the N-Channel type and is suitable for applications requiring a general-purpose small signal MOSFET.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage is 60 V.
The maximum drain current is 300 mA.
The maximum drain-source on-resistance is 2 ohm.
It is an N-channel MOSFET.
It is supplied in a surface mount small outline package.