| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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226,000 pcs
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226000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| ESD Protection | |
| Halogen Free | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| SVHC Present | |
| Tape & Reel |
The SI9430DY-T1 is a P-Channel TrenchFET Power MOSFET designed by Vishay Siliconix. It features a drain-source voltage of 20V and a maximum power dissipation of 19W at 25°C case temperature. The device offers low on-state resistance (RDS(on)) values, with a typical of 0.015Ω at VGS = -4.5V and ID = -5.6A, making it suitable for efficient power switching applications.
This MOSFET includes built-in ESD protection with a typical performance of 1800V. It is halogen-free and compliant with RoHS Directive 2002/95/EC. The device is available in a compact SO-8 package, suitable for surface mounting.
Key applications include load switching, battery switching, and charger switching in portable devices. Its robust design and efficient performance make it a reliable choice for various power management tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Breakdown Voltage is -20V, measured at Vgs = 0 V, Id = - 250 µA.
The maximum Gate-Source Voltage is ±12V.
The maximum Pulsed Drain Current is 50A.
The maximum Power Dissipation is 19W at Tc = 25°C.
The operating junction and storage temperature range is -55°C to 150°C.
The typical Drain-Source On-State Resistance is 0.015Ω when Vgs = -4.5 V and Id = -5.6 A.
Yes, it has built-in ESD protection with a Zener Diode, offering a typical protection of 1800V.