| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
24,325 pcs
|
24325 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| SVHC Present | |
| Storage Temperature | |
| Tape & Reel |
The Infineon Technologies BSC009NE2LS5I is an N-channel OptiMOSTM 5 Power MOSFET designed for high-performance buck converters. It features a 25V drain-source voltage and a very low on-resistance of 0.95 mΩ at VGS=4.5V.
Key electrical parameters include a maximum continuous drain current of 217A at VGS=10V and TC=25°C, and a pulsed drain current of 868A. The device is 100% avalanche tested and includes a monolithic integrated Schottky-like diode.
Packaged in a PG-TDSON-8 surface-mount package, this MOSFET is optimized for efficiency in power conversion applications. It is Pb-free and Halogen-free compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the BSC009NE2LS5I is 25V.
The maximum on-resistance (RDS(on)) of the BSC009NE2LS5I at VGS=4.5V is 0.95 mΩ.
The continuous drain current (ID) for the BSC009NE2LS5I is 217A at VGS=10V and TC=25°C, and 182A at VGS=4.5V and TC=25°C.
The BSC009NE2LS5I MOSFET is supplied in a PG-TDSON-8 package.
The RoHS Status is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH Status is listed as REACH Unaffected.
