| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
77,931 pcs
|
77931 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| SVHC Present | |
| Storage Temperature | |
| Tape & Reel |
The Vishay Dale SI2399DS is a P-Channel TrenchFET® Power MOSFET designed for applications such as load switches, PA switches, and DC/DC converters. It offers a drain-source breakdown voltage of -20V and a low on-state resistance, with a typical value of 0.034 Ohms at a gate-source voltage of -10V and a drain current of -5.1A.
This MOSFET features a continuous drain current capability of up to -6A at 25°C case temperature and is rated for a maximum power dissipation of 2.5W at 25°C case temperature. The operating junction and storage temperature range is from -55°C to 150°C.
The device is packaged in a TO-236 (SOT-23) surface-mount package. It is also compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition. The ordering information specifies it as Lead (Pb)-free and Halogen-free (Si2399DS-T1-GE3).
Key electrical characteristics include a gate-source threshold voltage typically around -0.6V, and dynamic parameters like input capacitance. Thermal resistance ratings include a typical junction-to-ambient of 75°C/W and junction-to-foot of 40°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-20 V
-0.6 V
0.028 Ω
-6 A
TO-236 (SOT-23)
RoHS3 Compliant
-55 °C to 150 °C
