| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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200,000 pcs
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200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Halogen Free | |
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| SVHC Present | |
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| Tape & Reel |
The Vishay Dale SI4486EY is an N-Channel Power MOSFET from the TrenchFET series, offering robust performance for various electronic applications. It boasts a drain-source voltage rating of 100V and a low on-state resistance, with a typical Rds(on) of 0.025Ω at VGS = 10V and ID = 7.9A. The device operates with a gate-source voltage range of ±20V and can handle continuous drain currents up to 7.9A at 25°C.
Designed for efficiency, this MOSFET is PWM optimized and features a maximum junction temperature of 175°C. It is housed in a standard SO-8 package, suitable for surface mounting. The SI4486EY also offers features like a continuous source current of 3.1A and a maximum power dissipation of 3.8W at 25°C, making it a reliable choice for power switching and control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the SI4486EY is 100V.
The typical on-state resistance is 0.025Ω at a gate-source voltage of 10V and a drain current of 7.9A.
The maximum continuous drain current at 25°C is 7.9A.
The operating junction and storage temperature range is -55°C to 175°C.
The SI4486EY is supplied in an SO-8 package.
The SI4486EY is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.