| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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466 pcs
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466 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
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| Package / Case |
The Vishay SI2319CDS-T1-GE3 is a P-Channel Power MOSFET designed for applications such as load switches and DC/DC converters. It features a drain-source breakdown voltage of -40V and a low on-state resistance, with a typical value of 0.077 Ω at VGS = -10V and ID = -3.1A.
This MOSFET is built using TrenchFET technology and is 100% Rg tested. It operates over a temperature range of -55°C to 150°C. The device is supplied in a SOT-23 package, suitable for surface mounting.
Key electrical characteristics include a typical gate threshold voltage of -1.2V and a typical gate charge of 7 nC. The continuous drain current is rated at -4.4A at 25°C case temperature. The device is also halogen-free and compliant to RoHS Directive 2002/95/EC.
The drain-source breakdown voltage is -40V.
The typical gate-source threshold voltage is -1.2V.
The maximum continuous drain current is -4.4A.
The typical drain-source on-state resistance is 0.064 Ohms.
The operating junction and storage temperature range is -55°C to 150°C.
It is supplied in a SOT-23-3 package.
Yes, it is RoHS3 Compliant.