SI3422DV-T1-E3
Vishay
The SI3422DV-T1-E3 is a single N-channel MOSFET from Vishay Siliconix. It features Trench Technology with a 200V VDS rating and a 4A ID.
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10,010 pcs
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10010 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The K740 from VBsemi is a single N-channel MOSFET designed for special purpose applications. It comes in a standard TO220 package, facilitating easy integration into various electronic circuits.
This MOSFET utilizes Trench Technology, contributing to its electrical performance. Key specifications include a drain-source voltage (Vds) of 200V and a continuous drain current (Id) of 30A. The gate-source voltage (Vgs) is rated at ±20V, with a typical gate threshold voltage (Vth) of 3V. Its on-resistance (RDS(on)) at a Vgs of 10V is typically 110mΩ, indicating efficient conduction.
The TO220 package is suitable for through-hole mounting and is commonly used in power applications where thermal management is important. The N-channel polarity makes it suitable for a wide range of switching and amplification tasks in power electronics.
| Qty | Low | High |
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| 1+ | $1.88 | $1.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Vds rating for the K740 MOSFET is 200V.
The continuous drain current for the K740 is 30A.
The typical gate threshold voltage of the K740 is 3V.
The typical on-resistance for the K740 at 10V Vgs is 110mΩ.
The K740 MOSFET is supplied in a TO220 package.
The K740 MOSFET uses Trench Technology.