| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
380 pcs
|
380 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature |
The Microsemi Corporation JANTXV2N5662 is a single bipolar NPN transistor. It is designed to operate within a wide temperature range of -65°C to 200°C.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 200V and a maximum collector current of 2A. The device has a maximum power dissipation of 1W. Its DC current gain (hFE) is a minimum of 40 at 500mA and 5V. The saturation voltage (Vce) is a maximum of 800mV at 400mA and 2A, with a collector cutoff current of 200nA.
This transistor is housed in a TO-205AA, TO-5-3 Metal Can package and is designed for through-hole mounting. The JANTXV2N5662 is qualified under MIL-PRF-19500/454, indicating its suitability for military applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage for the JANTXV2N5662 is 200V.
The maximum collector current (Ic) for the JANTXV2N5662 is 2A.
The maximum power dissipation for the JANTXV2N5662 is 1W.
The minimum DC Current Gain (hFE) is 40, measured at Ic=500mA and Vce=5V.
The maximum collector-emitter saturation voltage is 800mV, measured at Ic=2A and Ib=400mA.
The operating temperature range for the JANTXV2N5662 is from -65°C to 200°C.
The JANTXV2N5662 is available in a TO-205AA, TO-5-3 Metal Can package.