| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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600 pcs
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600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Industrial Grade | |
| Lead Style | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| SVHC Present | |
| Transistor Type |
This JANTXV2N6547 is a high-performance NPN bipolar junction transistor manufactured by Microsemi Corporation. It is designed for through-hole mounting and comes in a TO-204AA (TO-3) package.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 400V and a continuous collector current rating of up to 15A. The transistor exhibits a minimum DC current gain (hFE) of 12 at 5A and 2V, with a maximum Vce saturation of 5V at 3A and 15A. It is rated for a maximum power dissipation of 175W.
The operating temperature range for this device is from -65°C to 200°C, making it suitable for demanding thermal environments. The qualification MIL-PRF-19500/525 indicates its suitability for military applications.
This component is categorized under Single Bipolar Transistors, suitable for various power switching and amplification applications where robust performance and high voltage/current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 400V.
The maximum continuous collector current is 15A.
The maximum power dissipation is 175W.
The operating junction temperature range is -65°C to 200°C.
It is available in a TO-204AA (TO-3) through-hole package.
The minimum DC current gain is 12 at a test condition of 5A collector current and 2V collector-emitter voltage.