| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | 1008 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature |
The JAN2N3868S is a PNP bipolar junction transistor manufactured by Microsemi Corporation. This component is designed for applications requiring a breakdown voltage of up to 60V and can handle a maximum collector current of 3mA, with a maximum power dissipation of 1W.
Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 1.5A and 2V, and a Vce saturation of 1.5V at 2.5A and 250mA. The operating temperature range for this transistor is from -65°C to 200°C.
Packaged in a TO-205AD, TO-39-3 Metal Can configuration, the JAN2N3868S is designed for through-hole mounting. Its military qualification is MIL-PRF-19500/350, indicating its suitability for demanding applications.
This transistor is suitable for various electronic circuits where a reliable PNP transistor with these specifications is required. Its robust operating temperature range and military qualification make it a dependable choice for critical systems.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
TO-205AD (TO-39-3 Metal Can).
-65°C to +200°C.
30 at 1.5A Ic, 2V Vce.
1W.
Yes, MIL-PRF-19500/350.