| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Lead Spacing | |
| Lead Style | |
| Military Grade | |
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| Operating Temperature | |
| SVHC Present | |
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| Tape & Reel | |
| Vce Saturation (Max) |
The Microchip Technology JAN2N3868 is a single bipolar junction transistor (BJT) with a PNP configuration. It is designed for applications requiring a breakdown voltage of up to 60V and can handle a maximum collector current of 3mA. The transistor has a maximum power dissipation of 1W and operates within a temperature range of -65°C to 200°C.
This component is housed in a TO-205AA, TO-5-3 Metal Can package and is designed for through-hole mounting. Its DC current gain (hFE) is a minimum of 30 at 1.5A and 2V, with a Vce saturation of 1.5V maximum at 250mA and 2.5A. The collector cutoff current (ICBO) is a maximum of 100μA.
The JAN2N3868 is suitable for various electronic circuits where a reliable PNP transistor is needed. Its specifications make it a candidate for amplification and switching applications within its power and voltage ratings.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 60V.
The maximum collector current is 3mA.
The maximum power dissipation is 1W.
The JAN2N3868 is available in a TO-205AA (TO-5-3) metal can package for through-hole mounting.
The operating junction temperature range is -65°C to 200°C.
The minimum DC current gain is 30 at a test condition of 1.5A collector current and 2V Vce.
The maximum Vce saturation voltage is 1.5V at 250mA base current and 2.5A collector current.