| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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7 pcs
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7 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Package / Case | |
| Power Dissipation | |
| Transistor Type |
The Microchip Technology JANTX2N3585 is a high-performance NPN bipolar junction transistor (BJT) suitable for various electronic applications requiring robust switching and amplification capabilities.
This transistor boasts a maximum collector-emitter breakdown voltage of 300V and can handle a continuous collector current of up to 2A. Its Vce saturation is specified at 750mV at 125mA and 1A, with a minimum DC current gain (hFE) of 25 at 1A and 10V. The operating temperature range is broad, spanning from -65°C to 200°C, making it suitable for demanding environments.
Packaged in a TO-66 (TO-213AA) case, the JANTX2N3585 is designed for through-hole mounting. Its qualification under MIL-PRF-19500/384 indicates its suitability for military and other high-reliability applications.
Key specifications include a maximum power dissipation of 2.5W and a collector cutoff current of 5mA. This component is ideal for power switching, amplification, and general-purpose applications where high voltage and current handling are critical.
The JANTX2N3585 has a maximum collector-emitter breakdown voltage of 300V.
The maximum collector current for the JANTX2N3585 is 2A.
The JANTX2N3585 operates between -65°C and 200°C.
The JANTX2N3585 is mounted using the through-hole method.
The JANTX2N3585 is supplied in a TO-66 (TO-213AA) package.