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JANTXV2N7369 The Microsemi JANTXV2N7369 is a PNP bipolar transistor with a breakdown voltage of 80V and a maximum collector current of 10A. It is housed in a through-hole package.
Mfr Part #:

JANTXV2N7369

Available from 1 distributors
Mfr Name: Microsemi Corporation
Microsemi Corporation
The Microsemi JANTXV2N7369 is a PNP bipolar transistor with a breakdown voltage of 80V and a maximum collector current of 10A. It is housed in a through-hole package.
✓ Total Stock: 300 pcs
$ Price Range: $0.99

JANTXV2N7369 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
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300 pcs
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300 pcs On Request 1 On Request On Request On Request On Request On Request
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JANTXV2N7369 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Military Grade
Mounting Type
Operating Temperature
Supplier Device Package
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JANTXV2N7369 Description

Short technical summary and product information.

The JANTXV2N7369 from Microsemi Corporation is a single PNP bipolar junction transistor (BJT) designed for various electronic applications. It features a high collector-emitter breakdown voltage of 80V and can handle a maximum collector current of 10A. The transistor exhibits a minimum DC current gain (hFE) of 30 at 3A and 2V, with a Vce saturation of 1V at 500mA and 5A. Its maximum power dissipation is rated at 115W.

 

This component operates within a wide temperature range, from -65°C to 200°C, making it suitable for demanding environments. The JANTXV2N7369 is supplied in a TO-254AA package and utilizes a through-hole mounting type. Its qualification is MIL-PRF-19500/621, indicating compliance with military standards. The RoHS status is listed as RoHS3 Compliant, MSL is 1 Unlimited, and REACH status is Unaffected, though these compliance details are noted as unverified.

JANTXV2N7369 Quick Information

Product Type: PNP Transistor
Canonical Name: JANTXV2N7369 PNP Transistor
Subcategory: Bipolar (BJT)

JANTXV2N7369 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JANTXV2N7369 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JANTXV2N7369 Features

  • 80V collector-emitter breakdown voltage
  • 10A maximum collector current
  • 115W maximum power dissipation
  • -65°C to 200°C operating temperature range
  • TO-254AA through-hole package

JANTXV2N7369 Applications

  • High-reliability military power circuits.
  • Switching and amplification in aerospace systems.
  • DC-DC converters and power supplies.
  • Motor and actuator control stages.

JANTXV2N7369 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter breakdown voltage for the JANTXV2N7369?

The maximum collector-emitter breakdown voltage for the JANTXV2N7369 is 80V.

What is the maximum continuous collector current for the JANTXV2N7369?

The JANTXV2N7369 has a maximum continuous collector current of 10A.

What is the operating temperature range of the JANTXV2N7369 transistor?

The JANTXV2N7369 transistor operates between -65°C and 200°C.

What package type is the JANTXV2N7369 supplied in?

The JANTXV2N7369 is supplied in a TO-254AA package.

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