| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
750 pcs
|
750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Transistor Type | |
| Vce Saturation (Max) |
The JANTX2N5237 from Microsemi Corporation is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. It features a maximum collector-emitter breakdown voltage of 120V and can handle a continuous collector current of up to 10A. The transistor exhibits a minimum DC current gain (hFE) of 40 at 5A and 5V, with a Vce saturation of 2.5V maximum at 1A and 10A.
This device operates across a wide temperature range from -65°C to 200°C, making it suitable for harsh environmental conditions. It is qualified to MIL-PRF-19500/394 standards, indicating its suitability for military and aerospace applications. The JANTX2N5237 is packaged in a TO-205AA, TO-5-3 Metal Can configuration for through-hole mounting.
Key electrical characteristics include a maximum power dissipation of 1W and a low collector cutoff current of 10μA. Its robust construction and military qualification make it a reliable choice for power switching and amplification circuits where performance and durability are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
120V.
10A.
-65°C to 200°C (junction).
TO-205AA (TO-5-3) metal can, through-hole mounting.
40 at 5A collector current and 5V Vce.
2.5V at 1A base current and 10A collector current.
Yes, it is qualified to MIL-PRF-19500/394.