| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
150 pcs
|
150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature |
The Microsemi Corporation JANS2N7372 is a single bipolar PNP transistor. It is designed to operate with a collector-emitter breakdown voltage of up to 80V and can handle a maximum collector current of 5A. The transistor exhibits a Vce saturation of 1.5V at 500mA collector current and a minimum DC current gain (hFE) of 70 at 2.5A collector current and 5V Vce.
This component is suitable for applications requiring operation within a wide temperature range, from -65°C to 200°C. It is packaged in a TO-254-3, TO-254AA case and is designed for through-hole mounting.
Key electrical characteristics include a maximum power dissipation of 4W and a collector cutoff current of 50μA. The JANS2N7372 is qualified under MIL-PRF-19500/612, indicating its suitability for military applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 80V.
The maximum collector current is 5A.
The operating temperature range is -65°C to 200°C.
The JANS2N7372 is supplied in a TO-254-3, TO-254AA package.
The JANS2N7372 is designed for through-hole mounting.