| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30 pcs
|
30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| Transistor Type |
The JANS2N4150 from Microsemi Corporation is a single NPN bipolar junction transistor (BJT) designed for various electronic applications. This component features a collector-emitter breakdown voltage of 70V and can handle a maximum collector current of 10A.
The transistor is housed in a TO-5 package, which is a common metal can package suitable for through-hole mounting. Its specifications make it suitable for switching and amplification tasks within its operating limits.
Key electrical characteristics include its NPN transistor type, a 70V breakdown voltage, and a 10A collector current rating. The TO-5 package facilitates integration into circuit designs requiring robust components.
This part is classified under discrete semiconductor products, specifically within the single bipolar transistors category. Its JANS designation suggests compliance with military standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage for the JANS2N4150 is 70V.
The JANS2N4150 can handle a maximum collector current of 10A.
The JANS2N4150 is an NPN bipolar transistor.
The JANS2N4150 is supplied in a TO-5 package.