| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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150 pcs
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150 pcs | On Request | 1 | On Request | On Request | 1231 | On Request | On Request |
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| Automotive Grade | |
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The JAN2N3500 is a general-purpose NPN silicon bipolar junction transistor (BJT) from MCP. It is designed for various electronic applications requiring a robust transistor with specific voltage and current ratings.
Key electrical characteristics include a collector-emitter breakdown voltage of 150V and a maximum continuous collector current of 0.3A. These specifications make it suitable for amplification and switching tasks within its operational limits.
The transistor is housed in a TO-39 package, which is a common metal can package suitable for through-hole mounting. This mounting type facilitates easy integration into printed circuit boards for prototyping and production.
While compliance details like RoHS, MSL, and REACH are listed, they are currently unverified and should be treated with low confidence. Further verification from official sources is recommended for critical applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The JAN2N3500 is an NPN silicon transistor.
The maximum collector-emitter breakdown voltage is 150V.
The maximum collector current is 0.3A.
The JAN2N3500 is in a TO-39 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.