| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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160 pcs
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160 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) |
The JANTX2N3737 is a single NPN bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed for applications requiring a breakdown voltage of up to 40V and can handle a maximum collector current of 1.5A. The transistor has a maximum power dissipation of 500mW.
This component is housed in a TO-46-3 package and is designed for through-hole mounting. The operating temperature range is from -65°C to 200°C (TJ). Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 1A and 1.5V, and a Vce saturation voltage of 900mV maximum at 100mA and 1A.
The JANTX2N3737 is part of the Military, MIL-PRF-19500/395 series. It is suitable for various electronic circuits where a reliable NPN transistor is required, offering robust performance within its specified parameters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 40V.
The maximum collector current is 1.5A.
The maximum power dissipation is 500mW.
The operating junction temperature range is -65°C to 200°C.
The JANTX2N3737 is available in a TO-46-3 through-hole package, with a supplier device package of TO-46 (TO-206AB).
The minimum DC current gain (hFE) is 20, measured at a collector current of 1A and collector-emitter voltage of 1.5V.
The maximum collector-emitter saturation voltage is 900mV, measured at a base current of 100mA and collector current of 1A.