SI4953DY-T1-GE3
Vishay
The Vishay Dale SI4953DY-T1-GE3 is a dual P-channel MOSFET with a 30V drain-source voltage and 3.7A continuous drain current. It features a low on-resistance of 53 mOhm at 4.9A and 10V.
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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF9140 from Vishay Dale is a P-Channel Power MOSFET housed in a TO-3 package. This component is designed for robust performance, offering a breakdown voltage of -100V and a minimum threshold voltage of -4V. Its drain-source on-resistance is specified at 230mΩ minimum.
With a maximum power dissipation capability of 125W, the IRF9140 is suitable for applications requiring significant power handling. The operating temperature range spans from -55°C to 150°C, ensuring reliability in diverse environmental conditions. The MOSFET is mounted through-hole, facilitating integration into circuit boards.
This P-Channel MOSFET is manufactured by Samsung Electronics, as indicated by the fetched data, though the product is listed under Vishay Dale. It is hermetically packaged and manufactured on a MIL-PRF-19500 line, suggesting high reliability and suitability for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the IRF9140 is -100V.
The maximum power dissipation for the IRF9140 is 125W.
The IRF9140 operates between -55°C and 150°C.
The IRF9140 is available in a TO-3 package.
The IRF9140 is a through-hole mount type.
