| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
401,778 pcs
|
401778 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| FET Type | |
| Failure Rate | |
| Halogen Free | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| SVHC Present | |
| Tape & Reel |
This Vishay Dale SI4953DY-T1-GE3 is a dual P-channel MOSFET designed for surface mount applications. It offers a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 3.7A at 25°C. The MOSFET exhibits a low on-resistance (Rds On) of 53 mOhm at a drain current of 4.9A and gate-source voltage of 10V.
With a maximum power dissipation of 1.1W and an operating temperature range of -55°C to 150°C, this component is suitable for various electronic circuits. It features logic-level gate control and comes in a standard 8-SOIC package, facilitating easy integration into PCB designs. The TrenchFET® series technology ensures efficient performance.
The device is packaged in Cut Tape (CT) for surface mounting. It is RoHS and REACH unaffected, with a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the SI4953DY-T1-GE3 is 30V.
The continuous drain current (Id) at 25°C is 3.7A.
The maximum on-resistance (Rds On) is 53 mOhm when measured at 4.9A and 10V.
The operating temperature range is from -55°C to 150°C.
The SI4953DY-T1-GE3 is available in an 8-SOIC package for surface mounting.
Yes, the SI4953DY-T1-GE3 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 (Unlimited).