| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
258,286 pcs
|
258286 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,894 pcs
|
2894 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Spacing | |
| Lead Style | |
| Mounting Style | |
| Operating Temperature | |
| Power Dissipation | |
| SVHC Present | |
| Storage Temperature | |
| Tape & Reel |
The SI4501DY-T1-E3 is a N/P-Channel MOSFET manufactured by Vishay Siliconix. It features a Drain to Source Voltage of 30V for N-Channel and 8V for P-Channel, with a Continuous Drain Current of 6.30A. The on-resistance is specified at 27 mOhm.
This MOSFET is designed for surface mounting and comes in a SOIC-8 package. It operates within a temperature range of -55°C to 150°C. The device offers features such as low on-resistance and fast switching speed, making it suitable for various electronic applications.
Key electrical characteristics include a power dissipation of 1.3W and ESD protection up to 2000V. The low threshold voltage and fast switching speed are beneficial for efficient power management and switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain to source voltage rating is 30V.
The continuous drain current is 6.30A.
The typical on-resistance is 27mOhm.
The power dissipation rating is 1.3W.
The operating temperature range is -55°C to 150°C.
The package is SOIC-8 surface mount.
The typical switching speed is 35ns.