| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
110,000 pcs
|
110000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
180 pcs
|
180 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Operating Temperature |
The Toshiba TPC8067-H is an N-channel MOSFET designed for surface-mount applications. It features a drain-source voltage rating of 30V and a maximum on-resistance (RDS(on)) of 25mΩ. The input capacitance is specified at 690pF, with a rise time of 2.1ns.
This MOSFET operates within a temperature range of -55°C to 150°C. It is packaged in an SOIC case and is suitable for various electronic circuits requiring efficient switching and power handling. The component is manufactured by Toshiba.
Key electrical characteristics include a maximum RDS(on) of 25mΩ and a drain-source voltage of 30V. The input capacitance is 690pF, and the rise time is 2.1ns. The operating temperature range is from -55°C to 150°C, making it suitable for a wide array of environmental conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
SOIC (Small Outline Integrated Circuit).
-55°C to 150°C.
25mΩ maximum.
690pF typical.
2.1ns maximum.