| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
361,600 pcs
|
361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Tape & Reel | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Si4467DY-T1-E3 from Vishay Dale is a power MOSFET designed for various electronic applications. It features an N-Channel enhancement mode with a maximum drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 1.7A at 25°C.
The MOSFET has a maximum on-resistance (Rds On) of 240 mOhm at a drain current of 2.2A and a gate-source voltage of 10V. The gate threshold voltage (Vgs(th)) is a maximum of 4V at a drain current of 250µA. The maximum gate charge (Qg) is 18nC at 10V gate-source voltage. The device can withstand a maximum gate-source voltage of ±20V.
This component operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1.5W (Ta). It is housed in an 8-SOIC package and is suitable for surface mounting. The packaging is provided on a tape and reel (TR).
The Si4467DY-T1-E3 is RoHS3 compliant, REACH unaffected, and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the Si4467DY-T1-E3 is 200V.
The continuous drain current (Id) at 25°C is 1.7A.
The maximum on-resistance (Rds On) is 240 mOhm at 2.2A and 10V.
The operating temperature range is -55°C to 150°C.
The Si4467DY-T1-E3 is in an 8-SOIC package.
The Si4467DY-T1-E3 is RoHS3 compliant.