IPT015N10N5
Infineon Technologies
The Infineon Technologies IPT015N10N5 is an N-channel Power MOSFET designed for high-frequency switching applications. It offers a 100V drain-source voltage and a low on-resistance.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,357 pcs
|
1357 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
775 pcs
|
775 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Package / Case |
The Infineon IPT60R050G7 is an N-channel power MOSFET designed for high-performance applications. It utilizes CoolMOS G7 technology, providing a maximum drain-source voltage of 650V and a maximum on-resistance of 50mΩ. The device features a typical gate charge of 68nC and a continuous drain current of 57A at Tj<150°C.
This MOSFET is housed in a TOLL package, which offers improved thermal performance and a 4-pin Kelvin Source configuration for reduced parasitic source inductance. It is suitable for both hard and soft switching applications, including PFC and high-performance LLC stages.
The IPT60R050G7 is Pb-free and MSL1 compliant, making it suitable for various industrial applications. Its design enables higher current designs compared to previous generations, offering benefits in efficiency and ease of use due to reduced ringing.
The maximum drain-source voltage (VDS) at Tj,max is 650V.
The maximum on-resistance (RDS(on),max) is 50mΩ.
The typical gate charge (Qg.typ) is 68nC.
The package type is PG-HSOF-8.
Yes, the RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
