| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,837 pcs
|
1837 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request | |
|
1,357 pcs
|
1357 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Package / Case | |
| Power Dissipation | |
| SVHC Present |
The Infineon IPT015N10N5 is a high-performance N-channel MOSFET from the OptiMOSTM 5 family, rated for 100V.
Key electrical specifications include a maximum on-resistance of 1.5 mΩ at VGS=10V and ID=150A, and a continuous drain current of up to 353A at TC=25°C. It is designed for high-frequency switching and synchronous rectification, featuring an excellent gate charge x RDS(on) product (FOM).
This MOSFET is packaged in a PG-HSOF-8 surface-mount package. It is Pb-free and Halogen-free compliant, suitable for demanding applications requiring reliable power switching.
Features like 100% avalanche tested and qualification according to JEDEC standards make it a robust choice for various power electronics designs.
The maximum drain-source voltage (VDS) for the IPT015N10N5 is 100V.
The maximum on-resistance (RDS(on)) for the IPT015N10N5 is 1.5 mΩ when tested at VGS=10V and ID=150A.
The continuous drain current (ID) for the IPT015N10N5 is rated at 353A at a case temperature of 25°C with VGS=10V.
The IPT015N10N5 MOSFET is supplied in the PG-HSOF-8 package.
Yes, the IPT015N10N5 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IPT015N10N5 is Level 1.