| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,251 pcs
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6251 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPT60R022S7 is a high-performance N-Channel Power MOSFET designed with 600V CoolMOS SJ S7 technology. This device boasts a low on-resistance (RDS(on)) of 22mΩ at a VGS of 10V and ID of 375A, enabling minimized conduction losses and improved system efficiency.
Optimized for low-frequency switching applications, the IPT60R022S7 is suitable for solid-state relays, circuit breakers, and line rectification in SMPS and inverter topologies. Its Kelvin Source pin enhances switching performance at high currents. The MOSFET is housed in a TOLL package, which is MSL1 compliant and Pb-free.
Key electrical characteristics include a typical gate charge of 150 nC and a diode forward voltage (VSD) of 0.82V. The high pulse current capability of 375A makes it robust for demanding applications. This device is fully qualified according to JEDEC for Industrial Applications.
600 V.
PG-HSOF-8.
22 mΩ maximum at VGS=10V, ID=375A.
150 nC.
0.82 V.
375 A.
Surface mount.