| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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44,426 pcs
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44426 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type | |
| Package / Case | |
| Power Dissipation | |
| SVHC Present |
The Infineon Technologies IPT015N10N5 is a high-performance N-channel MOSFET from the OptiMOSTM 5 family. It is engineered for demanding applications requiring high-frequency switching and synchronous rectification, offering an excellent gate charge x RDS(on) product (FOM).
Key electrical specifications include a maximum drain-source voltage (VDS) of 100V and a maximum on-resistance (RDS(on)) of 1.5 mΩ at a gate-source voltage (VGS) of 10V and a drain current (ID) of 150A. The continuous drain current (ID) is rated at 353A at 25°C case temperature and 250A at 100°C case temperature. It also features a high pulsed drain current capability of 1412A.
This MOSFET is housed in a PG-HSOF-8 package, suitable for surface mount applications. It is Pb-free and halogen-free, complying with RoHS and IEC61249-2-21 standards. The device is 100% avalanche tested and qualified according to JEDEC standards for target applications.
The maximum drain-source voltage (VDS) for the IPT015N10N5 is 100V.
The maximum on-resistance (RDS(on)) is 1.5 mΩ when VGS is 10V and ID is 150A.
The continuous drain current (ID) is 353A at a case temperature of 25°C with VGS=10V.
The IPT015N10N5 is supplied in the PG-HSOF-8 package.
Yes, the IPT015N10N5 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
Yes, the REACH Status is REACH Unaffected.