| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,543 pcs
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1543 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
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| Package / Case | |
| Power Dissipation | |
| SVHC Present |
The Infineon IPT026N10N5 is an OptiMOSTM 5 series N-channel MOSFET with a drain-source voltage rating of 100V. It is engineered for high-frequency switching and synchronous rectification applications, offering an excellent figure of merit (FOM) due to its low on-resistance.
Key electrical characteristics include a maximum on-resistance of 2.6 mΩ at VGS=10V and ID=202A, and a continuous drain current of 202A at 25°C case temperature. The device is 100% avalanche tested and features a gate charge of 96 nC and output charge of 123 nC.
Packaged in a PG-HSOF-8 surface-mount package, the IPT026N10N5 is suitable for industrial applications. It is Pb-free and halogen-free, complying with RoHS standards. The operating temperature range is -55°C to 175°C.
This MOSFET is fully qualified according to JEDEC standards for industrial applications, making it a reliable choice for power management solutions.
The maximum drain-source voltage (VDS) for the IPT026N10N5 is 100 V.
The maximum on-resistance (RDS(on)) is 2.6 mΩ when VGS is 10 V and ID is 202 A.
The continuous drain current (ID) is rated at 202 A at 25°C case temperature with VGS=10 V.
The IPT026N10N5 is supplied in the PG-HSOF-8 package.
Yes, the IPT026N10N5 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH Status is Unaffected.