IPG20N06S2L-35A
Infineon
The Infineon IPG20N06S2L-35A is a dual N-channel logic level enhancement mode Power MOSFET. It offers a 55V breakdown voltage and 20A continuous drain current.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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11,896 pcs
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11896 pcs | On Request | 1 | On Request | On Request | 1118+ | On Request | On Request | |
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IPD70N03S4L-04 is a 30V N-channel enhancement mode MOSFET from Infineon, designed for high-efficiency power switching. It supports a continuous drain current of 70A at TC=25°C with VGS=10V, and a pulsed current rating of 280A. The drain-source on-state resistance is typically 3.6mΩ at VGS=10V, with a maximum of 4.3mΩ. Gate threshold voltage is typically 1.5V, ensuring compatibility with low-voltage drive circuits. Switching performance is characterized by a 7ns turn-on delay, 5ns rise time, 27ns turn-off delay, and 5ns fall time. The total gate charge is 37nC typical (48nC maximum), reducing driver requirements. Input capacitance is 2500pF typical, output capacitance 640pF, and reverse transfer capacitance 5pF. The integrated body diode has a forward voltage of 0.95V typical and a reverse recovery time of 40ns. These characteristics make the device suitable for efficient power conversion and load switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V minimum at VGS=0V, ID=1mA.
70A at TC=25°C and 70A at TC=100°C, VGS=10V.
Maximum 4.3mΩ, typical 3.6mΩ at ID=70A.
1.5V, with minimum 1.0V and maximum 2.2V at ID=30µA.
37nC typical, 48nC maximum.
Turn-on delay 7ns, rise time 5ns, turn-off delay 27ns, fall time 5ns (typical).
40ns typical.
