IPD26N06S2L-35 The Infineon IPD26N06S2L-35 is an N-channel Power MOSFET designed for automotive applications. It offers a 55V drain-source breakdown voltage and a continuous drain current of 30A.
Mfr Part #:

IPD26N06S2L-35

Available from 4 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD26N06S2L-35 is an N-channel Power MOSFET designed for automotive applications. It offers a 55V drain-source breakdown voltage and a continuous drain current of 30A.
✓ Total Stock: 9,979 pcs
$ Price Range: $2.93

IPD26N06S2L-35 Available from 4 distributors

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4,878 pcs
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25 pcs
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IPD26N06S2L-35 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Lead Style
Mounting Type
Power Dissipation
Reverse Recovery Time
SVHC Present

IPD26N06S2L-35 Description

Short technical summary and product information.

The Infineon IPD26N06S2L-35 is an N-channel, logic-level enhancement mode OptiMOS® Power-Transistor. It is automotive AEC Q101 qualified and features an ultra-low Rds(on) for efficient power handling.

 

Key electrical characteristics include a drain-source breakdown voltage of 55V and a continuous drain current of 30A at 25°C case temperature. The on-state resistance is as low as 27mΩ at VGS=10V and ID=13A. Dynamic characteristics include input capacitance of 621pF and output capacitance of 178pF.

 

This MOSFET operates at temperatures ranging from -55°C to +175°C. It is supplied in a PG-TO252-3-11 surface-mount package. The device is 100% avalanche tested and features a green, lead-free package.

 

Designed for automotive use, the IPD26N06S2L-35 is suitable for various power management applications where high efficiency and reliability are critical.

IPD26N06S2L-35 Quick Information

Product Type: MOSFET
Canonical Name: IPD26N06S2L-35 N-channel Logic Level Power MOSFET
Subcategory: N-Channel

IPD26N06S2L-35 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: true

IPD26N06S2L-35 Estimated Pricing

Qty Low High
1+ $2.93 $2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD26N06S2L-35 Features

  • N-channel logic level enhancement mode MOSFET.
  • Automotive AEC Q101 qualified.
  • Ultra low Rds(on).
  • 175°C operating temperature.
  • PG-TO252-3-11 surface mount package.

IPD26N06S2L-35 Applications

  • Automotive engine control unit designs
  • DC-DC converters in automotive systems
  • High-efficiency power management circuits
  • Motor control applications requiring low RDS(on)
  • 12V and 24V automotive electrical systems

IPD26N06S2L-35 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 55V.

What is the typical gate threshold voltage?

The typical gate threshold voltage is 1.6V.

What is the maximum continuous drain current?

The maximum continuous drain current is 30A.

What is the typical on-state resistance?

The typical on-state resistance is 27mΩ at VGS=10V and ID=13A.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +175°C.

What package is this MOSFET supplied in?

This MOSFET is supplied in a PG-TO252-3-11 package.

Is this MOSFET RoHS compliant?

The RoHS status is RoHS3 Compliant.

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