| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,878 pcs
|
4878 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
3,539 pcs
|
3539 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,537 pcs
|
1537 pcs | On Request | 1 | On Request | On Request | 1042+ | On Request | On Request | |
|
25 pcs
|
25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPD26N06S2L-35 is an N-channel, logic-level enhancement mode OptiMOS® Power-Transistor. It is automotive AEC Q101 qualified and features an ultra-low Rds(on) for efficient power handling.
Key electrical characteristics include a drain-source breakdown voltage of 55V and a continuous drain current of 30A at 25°C case temperature. The on-state resistance is as low as 27mΩ at VGS=10V and ID=13A. Dynamic characteristics include input capacitance of 621pF and output capacitance of 178pF.
This MOSFET operates at temperatures ranging from -55°C to +175°C. It is supplied in a PG-TO252-3-11 surface-mount package. The device is 100% avalanche tested and features a green, lead-free package.
Designed for automotive use, the IPD26N06S2L-35 is suitable for various power management applications where high efficiency and reliability are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 55V.
The typical gate threshold voltage is 1.6V.
The maximum continuous drain current is 30A.
The typical on-state resistance is 27mΩ at VGS=10V and ID=13A.
The operating and storage temperature range is -55°C to +175°C.
This MOSFET is supplied in a PG-TO252-3-11 package.
The RoHS status is RoHS3 Compliant.