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IPG20N06S2L-35A The Infineon IPG20N06S2L-35A is a dual N-channel logic level enhancement mode Power MOSFET. It offers a 55V breakdown voltage and 20A continuous drain current.
Mfr Part #:

IPG20N06S2L-35A

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPG20N06S2L-35A is a dual N-channel logic level enhancement mode Power MOSFET. It offers a 55V breakdown voltage and 20A continuous drain current.
✓ Total Stock: 16,536 pcs
$ Price Range: $1.67

IPG20N06S2L-35A Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
14,515 pcs
On Request
14515 pcs On Request 1 On Request On Request 21+ On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
2,021 pcs
On Request
2021 pcs On Request 1 On Request On Request 10+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPG20N06S2L-35A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
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Operating Temperature
Power Dissipation
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IPG20N06S2L-35A Description

Short technical summary and product information.

The Infineon IPG20N06S2L-35A is an OptiMOS® Power-Transistor designed for automotive applications. This dual N-channel MOSFET operates in enhancement mode and features logic-level gate drive.

 

Key electrical specifications include a drain-source breakdown voltage of 55V and a continuous drain current of 20A at 25°C case temperature. The on-state resistance is as low as 35mΩ typical at VGS=4.5V and ID=10A. It also provides a pulsed drain current capability of up to 80A.

 

This device is rated for a maximum operating temperature of 175°C and comes in a PG-TDSON-8 package suitable for surface mounting. It is AEC Q101 qualified and 100% avalanche tested, making it suitable for demanding automotive control and LED lighting applications.

IPG20N06S2L-35A Quick Information

Product Type: MOSFET
Series: IPG20N06S2L
Canonical Name: Infineon IPG20N06S2L-35A Dual N-channel Logic Level Power MOSFET
Subcategory: Power MOSFET

IPG20N06S2L-35A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPG20N06S2L-35A Estimated Pricing

Qty Low High
1+ $1.67 $1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPG20N06S2L-35A Features

  • Dual N-channel logic level enhancement mode.
  • 55V drain-source breakdown voltage.
  • 20A continuous drain current.
  • Low on-state resistance.
  • AEC Q101 qualified.

IPG20N06S2L-35A Applications

  • Ideal for power supply switching circuits
  • Suitable for motor control applications
  • Used in high-current load management
  • Applicable in automotive power modules

IPG20N06S2L-35A FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum continuous drain current?

The maximum continuous drain current is 20 A at 25°C case temperature and 20 A at 100°C case temperature.

What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 55 V.

What is the typical gate threshold voltage?

The typical gate threshold voltage is 1.6 V.

What is the typical on-state resistance?

The typical on-state resistance is 35 mΩ at VGS=4.5V and ID=10A, and 28 mΩ at VGS=10V and ID=15A.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +175°C.

What package type is this MOSFET in?

This MOSFET is in the PG-TDSON-8 package.

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